FCA35N60 n-channel mosfet ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 www.fairchildsemi.com 1 march 2013 FCA35N60 n-channel superfet ? mosfet 600 v, 35 a, 98 m features ? 650v @ t j = 150c ?typ.r ds(on) = 79 m ? ultra low gate charge (typ. q g = 139 nc ) ? low effective output capacitance (typ. c oss .eff = 340 pf ) ? 100% avalanche tested applications ? solar inverter ? ac-dc power supply description superfet ? mosfet is fair child semiconductor ? ?s first gener- ation of high voltage super-juncti on (sj) mosfet family that is utilizing charge balance technology for outstanding low on-resis- tance and lower gate charge performance.this technology is tai- lored to minimize conduction lo ss, provide superior switching performance, dv/dt rate and higher avalanche energy. conse- quently, superfet mosfet is very suitable for the switching power applications such as pfc, server / telecom power, fpd tv power, atx power and industrial power applications. d g s g s d to-3pn mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCA35N60 unit v dss drain to source voltage 600 v v gss gate-soure voltage 30 v i d d r a i n c u r r e n t -continuous (t c = 25 o c) 35 a -continuous (t c = 100 o c) 22.2 i dm d r a i n c u r r e n t - p u l s e d (note 1) 105 a e as single pulsed avalanche energy (note 2) 1455 mj i ar avalanche current (note 1) 35 a e ar repetitive avalanche energy (note 1) 31.25 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 o c) 312.5 w - derate above 25 o c2.5w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. unit r jc thermal resistance, junction to case - 0.4 o c/w r cs thermal resistance, case-to-heat sink 0.24 - r ja thermal resistance, junction to ambient - 42 *drain current limited by maximum junction temperature
FCA35N60 n-channel mosfet www.fairchildsemi.com 2 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 package marking and ordering information t c = 25 o c unless otherwise noted electrical characteristics off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCA35N60 FCA35N60 to-3pn - - 30 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 250 a, v gs = 0 v, t j = 25 o c 600 - - v i d = 250 a, v gs = 0 v, t j = 150 o c- 650 - v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 o c-0.6-v/ o c bv ds drain-source avalanche breakdown voltage v gs = 0 v, i d = 16 a - 700 - v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 480 v, t c = 125 o c--10 i gss gate to body leakage current v gs = 30 v, v ds = 0 v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 a3.0-5.0v r ds(on) static drain to source on resistance v gs = 10 v, i d = 17.5 a - 0.079 0.098 g fs forward transconductance v ds = 40 v, i d = 17.5 a - 28.8 - s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1 mhz - 4990 6640 pf c oss output capacitance - 2380 3170 pf c rss reverse transfer capacitance - 140 - pf c oss output capacitance v ds = 480 v, v gs = 0 v, f = 1.0 mhz - 113 - pf c oss eff. effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 340 - pf q g total gate charge at 10v v ds = 480 v, i d = 35 a v gs = 10 v (note 4) - 139 181 nc q gs gate to source gate charge - 31 - nc q gd gate to drain ?miller? charge - 69 - nc esr equivalent series resistance (g-s) drain open, f= 1 mhz -1.4- t d(on) turn-on delay time v dd = 300 v, i d = 35 a r g = 4.7 (note 4) -3478ns t r turn-on rise time - 120 250 ns t d(off) turn-off delay time - 105 220 ns t f turn-off fall time - 73 155 ns i s maximum continuous drain to source diode forward current - - 35 a i sm maximum pulsed drain to source diode forward current - - 105 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 35 a - - 1.4 v t rr reverse recovery time v gs = 0 v, i sd = 35 a di f /dt = 100 a/ s - 614 - ns q rr reverse recovery charge - 16.3 - c notes: 1: repetitive rating: pulse width limited by maximum junction temperature 2: i as = 17.5 a, v dd = 50 v, r g = 25 , starting t j = 25c 3: i sd 35 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25c 4: essentially independent of operating temperature typical characteristics
FCA35N60 n-channel mosfet www.fairchildsemi.com 3 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 456789 1 10 100 200 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.1 1 10 20 0.3 1 10 100 200 *notes: 1. 250 s pulse test 2. t c = 25 o c v gs = 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v i d , drain current[a] v ds , drain-source voltage[v] 0 255075100125 0.04 0.08 0.12 0.16 0.20 0.24 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.8 1.2 1.6 1 10 100 500 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 04080120160 0 2 4 6 8 10 *note: i d = 35a v ds = 100v v ds = 250v v ds = 400v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 100 600 10 100 1000 10000 50000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FCA35N60 n-channel mosfet www.fairchildsemi.com 4 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.85 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 250 a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] i d , drain current [a] t c , case temperature [ o c ] s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 10 -5 10 -4 10 -3 10 -2 10 -1 110 0.001 0.01 0.1 0.6 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 0.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [ z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCA35N60 n-channel mosfet www.fairchildsemi.com 5 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCA35N60 n-channel mosfet www.fairchildsemi.com 6 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 peak diode recovery dv/dt test circuit & waveforms
FCA35N60 n-channel mosfet www.fairchildsemi.com 7 ?2009 fairchild semiconductor corporation FCA35N60 rev. c0 mechanical dimensions to-3pn
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